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SSL Seminar Series 2002 No.2
Title:Selective Area Growth of Carbon Nanotubes by Ion Beam
Modification
Speaker: Mr Gohel Amarsinh and Mr Chin Kok Chung (SSL, Dept.
of Physics, NUS)
Date: Feburary 5, 2002
Time: 5:00-6:00pm
Venue: Physics Resource Room (Blk S13 # 02-16)
Abstract:
In this research project, we aim to utilise the O2+ primary
ion beam of the secondary ion mass spectroscopic (SIMS) system to
modify the catalyst surface to exhibit selective growth of carbon
nanotubes. The catalyst used is an Fe film of 50 nm thick deposited
on Si(100) substrate. Craters of various depths are made with the
ion beam and the modified morphology is studied in terms of grain
size and roughness. Carbon nanotubes is then synthesized on the
modified Fe/Si substrate using hot filament plasma enhanced chemical
vapor deposition. It is observed that there is indeed selective
growth of carbon nanotubes on the catalyst, with a higher growth
rate and denser growth being observed on the modified surfaces,
which includes the crater base and its borders, where grain size
is within the range of 27nm to 40nm and roughness values of 2.20nm
to 4.00nm.
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