SSL Seminar Series 2003 No.2
Combined talks (two speakers)
Date: July 21, 2003
Venue: Physics Resource Room (Blk S13 # 02-16)
Speaker I: Mr. Ong Kuang Kian,
Clark(Master Candidate of NTU)
Title: Pulsed Laser Annealing for the Formation of Ultra-Shallow
The continuous scaling down of gate dimension of ultra-large
scale integrated (ULSI) devices for the improvements in performance
and speed has aggravated the short channel effects (SCE), which
cause excessive leakage to the devices. As a result, the need for
ultra-shallow and highly activated junctions becomes more critical
especially in sub-0.1 m devices.
The work pertains to the formation of ultra-shallow p+/n junction
using ultra-low energy (ULE) implantation and pulsed laser annealing.
Ultra-shallow p+/n junctions formed by laser annealing with shallow
and deep preamorphization implantation (PAI) were compared. Laser
annealing of crystalline Si, without PAI, is demonstrated to form
junctions with comparable junction depth and abruptness as formed
with PAI. Effect of multiple-pulse laser annealing on dopant redistribution
is also investigated. Feasibility of non-melt laser annealing to
form ultra-shallow junctions is briefly discussed.
Speaker II: Mr. Sun Yiyang
Title: Structures of high-index metal surfaces studied by LEED
High-index (or open, vicinal, stepped) transition metal surfaces
are of practical interest in areas such as heterogeneous
catalysis. Structures of these surfaces are usually the starting
points for further studies on electronic, vibrational, energetic
and magnetic properties, such as density of states, surface phonon,
work function and spin magnetic moment. In this presentation, the
Cu(210) surface will be taken as an example to introduce the methodology
of surface structure determination, mainly quantitative low energy
electron diffraction (LEED) analysis and pseudopotential density
functional theory (DFT) calculations.
General trend for multilayer relaxations on open metal surfaces
will also be discussed.