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Professor Andrew Wee
2000 Publications
81. Jie YX, Xiong YN, Wee ATS, Huan CHA, Ji W
Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrix
APPL PHYS LETT 77: (24) 3926-3928 DEC 11 2000
(also highlighted in
Virtual J. Nanoscale Science & Technology)
80. Lee PS, Pey KL, Mangelinck D, Ding J, Wee ATS, Chan L
Improved NiSi salicide process using presilicide N-2(+) implant for MOSFETs
IEEE ELECTR DEVICE L 21: (12) 566-568 DEC 2000
79. Zhang K, Zhu FR, Huan CHA, Wee ATS
Indium tin oxide films prepared by radio frequency magnetron sputtering method at a low processing temperature
THIN SOLID FILMS 376: (1-2) 255-263 NOV 1 2000
78. Chong YF, Pey KL, Lu YF, Wee ATS, Osipowicz T, Seng HL, See A, Dai JY
Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p(+)/n junctions
APPL PHYS LETT 77: (19) 2994-2996 NOV 6 2000
77. Tay ST, Jiang XH, Huan CHA, Wee ATS, Liu R
Influence of annealing temperature on ferroelectric properties of SrBi2Ta2O9 thin films prepared by off-axis radio
frequency magnetron sputtering
J APPL PHYS 88: (10) 5928-5934 NOV 15 2000
76. Lin T, Yu GY, Wee ATS, Shen ZX, Loh KP
Compositional mapping of the argon-methane-hydrogen system for polycrystalline to nanocrystalline diamond film
growth in a hot-filament chemical vapor deposition system
APPL PHYS LETT 77: (17) 2692-2694 OCT 23 2000
75. Choi HW, Chua SJ, Raman A, Pan JS, Wee ATS.
Plasma-induced damage to n-type GaN
APPL PHYS LETT 77: (12) 1795-1797 SEP 18 2000
74. Lin T, Loh KP, Wee ATS, Shen ZX, Lin J, Lai CH, Gao QJ, Zhang TJ
High resolution transmission electron microscopy study of the initial growth of diamond on silicon
DIAM RELAT MATER 9: (9-10) 1703-1707 SEP-OCT 2000
73. Ng V, Ng SP, Thio HH, Choi WK, Wee ATS, Jie YX
Luminescence and X-ray diffraction studies of Ge nanocrystals in amorphous silicon oxide
MAT SCI ENG A-STRUCT 286: (1) 161-164 JUN 30 2000
72. Yao HB, Li Y, Wee ATS
An XPS investigation of the oxidation/corrosion of melt-spun Mg
APPL SURF SCI 158: (1-2) 112-119 MAY 2000
71. Tan LS, Prakash S, Ng KM, Ramam A, Chua SJ, Wee ATS, Lim SL
Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
SEMICOND SCI TECH 15: (6) 585-588 JUN 2000
70. Chong YF, Pey KL, Wee ATS, See A, Chan L, Lu YF, Song WD, Chua LH
Annealing of ultrashallow p(+)/n junction by 248 nm excimer laser and rapid thermal
processing with different preamorphization depths
APPL PHYS LETT 76: (22) 3197-3199 MAY 29 2000
69. Li X, Goh SH, Lai YH, Wee ATS
Miscibility of carboxyl-containing polysiloxane/poly(vinylpyridine) blends
POLYMER 41: (17) 6563-6571 AUG 2000
68. Zhu FR, Huan CHA, Zhang KR, Wee ATS
Investigation of annealing effects on indium tin oxide thin films by electron energy loss
spectroscopy
THIN SOLID FILMS 359: (2) 244-250 JAN 31 2000
67. Rusli, Yoon SF, Yang H, Ahn J, Huang QF, Zhang Q, Guo YP,
Yang CY, Yeo EJ, Wee ATS, Huan ACH, Watt F
Tungsten-carbon thin films deposited using screen grid technique in an electron cyclotron
resonance chemical vapour deposition system
SURF COAT TECH 123: (2-3) 134-139 JAN 24 2000
66. Choi WK, Chen JH, Bera LK, Feng W, Pey KL, Mi J, Yang CY,
Ramam A, Chua SJ, Pan JS, Wee ATS, Liu R
Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by
rapid thermal chemical vapor deposition
J APPL PHYS 87: (1) 192-197 JAN 1 2000