2003 Publications

153. Lau GS, Tok ES, Liu R, Wee ATS, Tjiu WC, Zhang J
Nanostructure formation by O-2(+) ion sputtering of Si/SiGe heterostructures
NANOTECHNOLOGY 14 (11): 1187-1191 NOV 2003

152. Sun YY, Xu H, Feng YP, Huan ACH, Wee ATS
Structure of Fe(310) studied by quantitative LEED analysis and pseudopotential DFT calculations
SURF SCI 546 (2-3): L808-L812 DEC 1 2003

151. Yao HB, Li Y, Wee ATS
Passivity behavior of melt-spun Mg-Y alloys
ELECTROCHIM ACTA 48 (28): 4197-4204 DEC 15 2003

150. Ho V, Teo LW, Choi WK, Chim WK, Tay MS, Antoniadis DA, Fitzgerald EA, Du AY, Tung CH, Liu R, Wee ATS
Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure
APPL PHYS LETT 83 (17): 3558-3560 OCT 27 2003

149. Chen W, Xie XN, Xu H, Wee ATS, Loh KP
Atomic scale oxidation of silicon nanoclusters on silicon carbide surfaces
J PHYS CHEM B 107 (42): 11597-11603 OCT 23 2003

148. Sun YY, Xu H, Zheng JC, Zhou JY, Feng YP, Huan ACH, Wee ATS
Multilayer relaxation of Cu(210) studied by layer-doubling LEED analysis and pseudopotential density functional theory calculations
PHYS REV B 68 (11): Art. No. 115420 SEP 15 2003

147. Yao HB, Li Y, Wee ATS
Corrosion behavior of melt-spun Mg65Ni20Nd15 and Mg65Cu25Y10 metallic glasses
ELECTROCHIM ACTA 48 (18): 2641-2650 AUG 1 2003

146. Sun YY, Wee ATS, Huan ACH
Study of a computational-time-saving scheme for quantitative LEED analysis by the matrix inversion method
SURF REV LETT 10 (2-3): 493-497 APR-JUN 2003

145. Chong YF, Gossmann HJL, Thompson MO, Pey KL, Wee ATS, Talwar S, Chan L
Reduction of carrier depletion in p(+) polysilicon gates using laser thermal processing
IEEE ELECTR DEVICE L 24 (5): 360-362 MAY 2003

144. Xu H, Huan ACH, Wee ATS, Tong DM
Magnetic properties of ultrathin Co films on Si (111)
SOLID STATE COMMUN 126 (12): 659-664 JUN 2003

143. Peng HJ, Shen ZX, Lim EH, Lai CW, Liu R, Wee ATS, Sameer A, Dai JY, Zhang BC, Zheng JZ
Effects of first rapid thermal annealing temperature on Co silicide formation
SOLID STATE ELECTRON 47 (8): 1249-1253 AUG 2003

142. Loh KP, Wy FA, Lim CW, Zhang X, Chen W, Xie XN, Xu H, Wee ATS
Reactive atom beam deposition of boron nitride ultrathin films and nanoparticles using borazine
DIAM RELAT MATER 12 (3-7): 1103-1107 MAR-JUL 2003

141. Yeo KL, Wee ATS, Liu R, Zhou FF, See A
Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
J VAC SCI TECHNOL B 21 (1): 193-197 JAN-FEB 2003

140. Price RW, Tok ES, Liu R, Wee ATS, Woods NJ, Zhang J
Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(001) surface
J CRYST GROWTH 251 (1-4): 676-680 APR 2003

139. Gohel A, Chin KC, Lim KY, Tay ST, Liu R, Chen GS, Wee ATS
Selective area growth of aligned carbon nanotubes by ion beam surface modification
CHEM PHYS LETT 371 (1-2): 131-135 MAR 28 2003

138. Lim KY, Sow CH, Lin JY, Cheong FC, Shen ZX, Thong JTL, Chin KC, Wee ATS
Laser pruning of carbon nanotubes as a route to static and movable structures
ADV MATER 15 (4): 300-303 FEB 17 2003

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137. Liu R, Ng CM, Wee ATS
Surface roughening effect in sub-keV SIMS depth profiling
APPL SURF SCI 203: 256-259 JAN 15 2003

136. Yeo KL, Wee ATS, See A, Liu R, Ng CM
SIMS backside depth profiling of ultra shallow implants
APPL SURF SCI 203: 335-338 JAN 15 2003

135. Koh YW, Loh KP, Rong L, Wee ATS, Huang L, Sudijono J
Low dielectric constant a-SiOC : H films as copper diffusion barrier
J APPL PHYS 93 (2): 1241-1245 JAN 15 2003

118. Liu L, Gong H, Wang Y, Wee TAS, Liu R

SIMS depth profiling analysis of Cu/Ta/SiO2 interfacial diffusion at different annealing temperature

INT J MOD PHYS B 16 (1-2): 322-327 JAN 20 2002

117. Tay ST, Huan CHA, Wee ATS, Liu R, Goh WC, Ong CK, Chen GS
Substrate temperature studies of SrBi2(Ta1-xNbx)(2)O-9 grown by pulsed laser ablation deposition
J VAC SCI TECHNOL A 20 (1): 125-131 JAN-FEB 2002

116. Choi WK, Natarajan A, Bera LK, Wee ATS, Liu YJ
Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films
J APPL PHYS 91 (4): 2443-2448 FEB 15 2002

115. Feng ZC, Yang TR, Liu R, Wee TSA
Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor deposition
INT J MOD PHYS B 16 (1-2): 268-274 JAN 20 2002

114. Choi WK, Teh LK, Bera LK, Chim WK, Wee ATS, Jie YX
Microstructural characterization of rf sputtered polycrystalline silicon germanium films
J APPL PHYS 91: (1) 444-450 JAN 1 2002