Patents

Professor Andrew Wee

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Patents

1. Y. F. Chong, K. L. Pey, A. See, and A. T. S. Wee, "Method To Form MOS Transistors With Shallow Junctions Using Laser Annealing", United States Patent No. 6,335,253 (awarded 1 Jan 2002).

2. A. T. S. Wee, A. Gohel, and K. C. Chin, "Selective Area Growth of Aligned Carbon Nanotubes on a Modified Catalytic Surface", US Patent Application No. 10/461,251, PCT International Application No. PCT/SG03/00146 (Pending); Singapore Patent Application No. 200407349-0.

3. M. Cholewa, S. P. Lau, G. C. Yi, A. P. Burden, L. Huang, X. Y. Gao, A. T. S. Wee and H. O. Moser, "Radiation detector having coated nanostructure and method", United States Patent 7,388,201 (awarded June 17, 2008)

4. Chen Wei, Chen ZY, Wee ATS, "Hole Doping Methods for Graphene", US 61/343,886, 2010.

5. Chen Wei, Xie Lan Fei, Wang Xiao, Sun Jia Tao, Ariando, Wee ATS, "Fabrication of Room-Temperature Ferromagnetic Graphene by Surface Modification with High Work Function Metal Oxides", US, 61/404,975, Oct 2010

6. Ji Wei, Wee ATS, Chen Wei, Venkatram Nalla, Ram Sevak Singh, "Laser Patterning of Graphene/ Graphene-oxide Schottky Junction for Photoconductive and Photovoltaic Applications", 61/515,380, Sep 2011

7. Chen Wei, Chen ZY, Wee ATS, Xie LF, Wang X, Sun JT, Ariando, "Hole Doping of Graphene", PCT Patent Application No. PCT/SG2011/000177, filing date: 5th May 2011; WO 2011/139236, published on 11th Nov 2011.