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Professor Andrew Wee
1991
9. Wee ATS, Huan CHA, Gopalakrishnan R, Tan KL, Kang ET, Neoh KG, Shirakawa H
Static SIMS of polyacetylene - the efect of chain unsaturation
SYNTHETIC MET 45: (2) 227-234 NOV 1991
8. French CL, Wee ATS, Foord JS, Davies GJ
Mechanistic aspects relating to the growth of GaxIn1-xAs by CBE
J CRYST GROWTH 107: (1-4) 1038-1039 JAN 1991
7. Foord JS, Murrell AJ, O'Hare D, Singh NK, Wee ATS, Whitaker TJ
Studies of the surface reactivity of novel hydride adduct precursors for CBE growth of III-V compounds
J CRYST GROWTH 107: (1-4) 1040-1040 JAN 1991
1990 & before
6. Murrell AJ, Wee ATS, Fairbrother DH, Singh NK, Foord JS, Davies GJ, Andrews DA
Surface chemical processes in metal organic molecular beam epitaxy - Ga deposition from triethylgallium on GaAs(100)
J APPL PHYS 68: (8) 4053-4063 OCT 15 1990
5. Murrell AJ, Wee ATS, Fairbrother DH, Singh NK, Foord JS, Davies GJ, Andrews DA
The thermal decomposition of triethylgallium on GaAs(100)
VACUUM 41: (4-6) 955-957 1990
4. Wee ATS, Murrell AJ, Singh NK, O'Hare DM, Foord JS
Surface decomposition mechanism of the novel precursor bistrimethylamine aluminum hydride
on GaAs(100)
VACUUM 41: (4-6) 968-971 1990
3. Murrell AJ, Wee ATS,
Fairbrother DH, Singh NK, Foord JS, Davies GJ, Andrews DA
Surface studies of the thermal decomposition of triehtylgallium on GaAs(100)
J CRYST GROWTH 105: (1-4) 199-202 OCT 1990
2. Wee ATS, Murrell AJ, Singh NK, O'Hare DM, Foord JS
Aluminum film growth by chemical vapor deposition of AIH3(NMe3)2
J CHEM SOC CHEM COMM (1) 11-13 JAN 1 1990
1. Wee A, Jackman RB, Price RJ,
Foord JS
Surface spectroscopic and molecular beam studies of the reactions of trimethylaluminum on
Si(100)
J PHYS-CONDENS MAT 1: SB145-SB148 Suppl. B OCT 1989